MAGX-S32731-180L00

MAGX-S32731-180L00 Datasheet

MAGX-002731-180L0x

Part	Datasheet
MAGX-S32731-180L00	MAGX-S32731-180L00 (pdf)

Related Parts	Information
MAGX-002731-180L0S	MAGX-002731-180L0S
MAGX-002731-180L00	MAGX-002731-180L00

PDF Datasheet Preview
MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 us Pulse, 10% Duty • GaN Depletion Mode HEMT Microwave Transistor • Common Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS Compliant • +50 V Typical Operation • MTTF of 600 Years TJ < 200ºC • EAR99 Export Classification MAGX-002731-180L00 • Civilian and Military Pulsed Radar The MAGX-002731-180L00 and MAGX-002731180L0S are gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistors optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. MAGX-002731-180L0S Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-180L00 and MAGX-002731180L0S are constructed using thermally enhanced Cu/Mo/Cu flanged ceramic packages which provide excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information1 Package MAGX-002731-180L00 Standard Flange MAGX-002731-180L0S MAGX-S32731-180L00 Earless Flange 2700 3100 MHz Evaluation Board When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-002731-180L0x GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 us Pulse, 10% Duty Electrical Specifications2 2700 - 3100 MHz, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests VDD = 50 V, IDQ = 500 mA, 300 µs Pulse, 10% Duty Cycle Output Power PIN = 14 Wpk POUT Gain Drain Efficiency Load Mismatch Stability PIN = 14 Wpk PIN = 14 Wpk PIN = 14 Wpk VSWR-S - Load Mismatch Tolerance PIN = 14 Wpk VSWR-T - Typical RF performance measured in an RF evaluation board. Typ. 215 51 5:1 10:1 Max. Units Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 30 mA Forward Transconductance Dynamic Characteristics VDS = 5 V, ID = mA Input Capacitance N/A - Input Internally Matched VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz Symbol Min. VGS TH CISS COSS CRSS N/A - Typ. Max. Units M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

PDF Datasheet Preview

MAGX-002731-180L0x

GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 us Pulse, 10% Duty
• GaN Depletion Mode HEMT Microwave Transistor
• Common Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Cu/Mo/Cu Package
• RoHS Compliant
• +50 V Typical Operation
• MTTF of 600 Years TJ < 200ºC
• EAR99 Export Classification

MAGX-002731-180L00
• Civilian and Military Pulsed Radar

The MAGX-002731-180L00 and MAGX-002731180L0S are gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistors optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz.

MAGX-002731-180L0S

Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs.

The MAGX-002731-180L00 and MAGX-002731180L0S are constructed using thermally enhanced Cu/Mo/Cu flanged ceramic packages which provide excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information1

Package

MAGX-002731-180L00

Standard Flange

MAGX-002731-180L0S MAGX-S32731-180L00

Earless Flange
2700 3100 MHz Evaluation Board
When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-002731-180L0x

GaN on SiC HEMT Pulsed Power Transistor 180 W Peak, 2700 to 3100 MHz, 300 us Pulse, 10% Duty

Electrical Specifications2 2700 - 3100 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min.

RF Functional Tests VDD = 50 V, IDQ = 500 mA, 300 µs Pulse, 10% Duty Cycle

Output Power

PIN = 14 Wpk

POUT

Gain Drain Efficiency Load Mismatch Stability

PIN = 14 Wpk PIN = 14 Wpk PIN = 14 Wpk

VSWR-S -

Load Mismatch Tolerance

PIN = 14 Wpk

VSWR-T -

Typical RF performance measured in an RF evaluation board.

Typ.
215 51 5:1 10:1

Max. Units

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 30 mA

Forward Transconductance Dynamic Characteristics

VDS = 5 V, ID = mA

Input Capacitance

N/A - Input Internally Matched

VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

Symbol Min.

VGS TH

CISS COSS CRSS

N/A -

Typ.

Max. Units

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-S32731-180L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-S32731-180L00 646888