MAGX-001214-SB3PPR

MAGX-001214-SB3PPR Datasheet

MAGX-001214-500L00 MAGX-001214-500L0S

Part	Datasheet
MAGX-001214-SB3PPR	MAGX-001214-SB3PPR (pdf)

Related Parts	Information
MAGX-001214-500L0S	MAGX-001214-500L0S
MAGX-001214-500L00	MAGX-001214-500L00

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MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty • GaN on SiC D-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260°C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200°C • L-Band pulsed radar The MAGX-001214-500L00 is a gold-metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. MAGX-001214-500L00 MAGX-001214-500L0S Ordering Information Part Number MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-SB3PPR Flanged Flangeless - GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty Typical RF Performance under standard operating conditions, POUT = 500 W Peak Freq. Gain Eff. Droop +1dB OD 1200 1250 1300 1350 1400 Electrical Specifications Freq. = 1200 - 1400 MHz, IDQ = 400 mA, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests VDD = 50 V 300 µs / 10% Input Power Gain POUT= 500 W Peak 50 W avg. POUT= 500 W Peak 50 W avg. Drain Efficiency Pulse Droop Load Mismatch Stability POUT= 500 W Peak 50 W avg. POUT= 500 W Peak 50 W avg. Droop POUT= 500 W Peak 50 W avg. VSWR-S Load Mismatch Tolerance POUT= 500 W Peak 50 W avg. VSWR-T Extended Pulse Width Conditions VDD = 42 V ms / 10% typical RF data Input Power Gain POUT= 375 W Peak W avg. POUT= 375 W Peak W avg. Drain Efficiency POUT= 375 W Peak W avg.

PDF Datasheet Preview

MAGX-001214-500L00 MAGX-001214-500L0S

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty
• GaN on SiC D-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260°C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 years TJ < 200°C
• L-Band pulsed radar

The MAGX-001214-500L00 is a gold-metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

MAGX-001214-500L00

MAGX-001214-500L0S
Ordering Information

Part Number MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-SB3PPR

Flanged

Flangeless - GHz Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

MAGX-001214-500L00 MAGX-001214-500L0S

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty

Typical RF Performance under standard operating conditions, POUT = 500 W Peak

Freq.

Gain

Eff.

Droop
+1dB OD
1200
1250
1300
1350
1400

Electrical Specifications Freq. = 1200 - 1400 MHz, IDQ = 400 mA, TA = 25°C

Parameter

Test Conditions

Symbol Min.

RF Functional Tests VDD = 50 V 300 µs / 10%

Input Power Gain

POUT= 500 W Peak 50 W avg.

POUT= 500 W Peak 50 W avg.

Drain Efficiency Pulse Droop

Load Mismatch Stability

POUT= 500 W Peak 50 W avg.

POUT= 500 W Peak 50 W avg. Droop

POUT= 500 W Peak 50 W avg. VSWR-S

Load Mismatch Tolerance

POUT= 500 W Peak 50 W avg. VSWR-T

Extended Pulse Width Conditions VDD = 42 V ms / 10% typical RF data

Input Power Gain

POUT= 375 W Peak W avg.

POUT= 375 W Peak W avg.

Drain Efficiency

POUT= 375 W Peak W avg.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-001214-SB3PPR Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-001214-SB3PPR 646883