MAGX-001090-700L00

MAGX-001090-700L00 Datasheet

MAGX-001090-700L0x

Part	Datasheet
MAGX-001090-700L00	MAGX-001090-700L00 (pdf)

Related Parts	Information
MAGX-001090-700L0S	MAGX-001090-700L0S

PDF Datasheet Preview
MAGX-001090-700L0x GaN on SiC HEMT Pulsed Power Transistor 700 W Peak, 1030 - 1090 MHz, Mode-S ELM • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • 50 V Operation • RoHS* Compliant and 260 °C Reflow Compatible • MTTF = 600 years TJ < 200 °C MAGX-001090-700L00 • Civilian Air Traffic Control ATC • Secondary Radar for IFF and Mode-S Avionics. The MAGX-001090-700L00 and MAGX-001090-700L0S are gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. MAGX-001090-700L0S Ordering Information1 MAGX-001090-700L00 Standard Flange MAGX-001090-700L0S Earless Flange MAGX-A11090-700L00 1030-1090 MHz Evaluation Board When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices Typical RF Performance under Standard Operating Conditions, POUT = 700 W Peak Freq Gain Eff. Droop +1dB OD VSWR-S VSWR-T 1030 1060 1090 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-001090-700L0x GaN on SiC HEMT Pulsed Power Transistor 700 W Peak, 1030 - 1090 MHz, Mode-S ELM Electrical Specifications Freq. = 1030 - 1090 MHz, TA = 25 °C Parameter Test Conditions Symbol Min. Typ. Max. Units Mode-S ELM RF Functional Tests2 Peak Input Power Power Gain VDD = 50 V, IDQ = 500 mA, Drain Efficiency 48 pulses of 32 µs on and 18 µs off, repeat every 24 ms, Pulse Droop Overall Duty Factor = Droop POUT = 700 W Peak 70 W avg. Load Mismatch Stability VSWR-S - Load Mismatch Tolerance VSWR-T For Mode-S ELM pulse conditions power measurements are obtained as follows RF input / output power is measured at the middle of the 25th pulse in the burst t = ms Droop measurements are defined as the drop in power from the 5th pulse t = 216us and 43rd pulse t = 2.116ms in the burst. Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage

PDF Datasheet Preview

MAGX-001090-700L0x

GaN on SiC HEMT Pulsed Power Transistor 700 W Peak, 1030 - 1090 MHz, Mode-S ELM
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• 50 V Operation
• RoHS* Compliant and 260 °C Reflow Compatible
• MTTF = 600 years TJ < 200 °C

MAGX-001090-700L00
• Civilian Air Traffic Control ATC
• Secondary Radar for IFF and Mode-S Avionics.

The MAGX-001090-700L00 and MAGX-001090-700L0S are gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

MAGX-001090-700L0S
Ordering Information1

MAGX-001090-700L00

Standard Flange

MAGX-001090-700L0S

Earless Flange

MAGX-A11090-700L00
1030-1090 MHz Evaluation Board
When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices

Typical RF Performance under Standard Operating Conditions, POUT = 700 W Peak

Freq

Gain

Eff.

Droop +1dB OD VSWR-S VSWR-T
1030
1060
1090
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-001090-700L0x

GaN on SiC HEMT Pulsed Power Transistor 700 W Peak, 1030 - 1090 MHz, Mode-S ELM

Electrical Specifications Freq. = 1030 - 1090 MHz, TA = 25 °C

Parameter

Test Conditions

Symbol Min.

Typ.

Max. Units

Mode-S ELM RF Functional Tests2

Peak Input Power

Power Gain

VDD = 50 V, IDQ = 500 mA,

Drain Efficiency
48 pulses of 32 µs on and 18 µs off,
repeat every 24 ms,

Pulse Droop

Overall Duty Factor =

Droop

POUT = 700 W Peak 70 W avg.

Load Mismatch Stability

VSWR-S -

Load Mismatch Tolerance

VSWR-T

For Mode-S ELM pulse conditions power measurements are obtained as follows RF input / output power is measured at the middle of the 25th pulse in the burst t = ms Droop measurements are defined as the drop in power from the 5th pulse t = 216us and 43rd pulse t = 2.116ms in the burst.

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-001090-700L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-001090-700L00 646880