MAGX-000912-650L0S

MAGX-000912-650L0S Datasheet

MAGX-000912-650L0x

Part	Datasheet
MAGX-000912-650L0S	MAGX-000912-650L0S (pdf)

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MAGX-000912-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 960-1215 MHz, 128 us Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • 50 V Operation • 800 W Performance at 20 µs and 6% Duty Factor • RoHS* Compliant and 260 °C Reflow Compatible • MTTF = 600 years TJ < 200 °C • L-Band pulsed radar. The MAGX-000912-650L00 and MAGX-000912-650L0S are gold metalized matched gallium nitride GaN on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. MAGX-000912-650L00 MAGX-000912-650L0S Ordering Information MAGX-000912-650L00 Standard Flange MAGX-000912-650L0S Earless Flange MAGX-A00912-650L00 960 - 1215 MHz Evaluation Board1 When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices Typical RF Performance under Standard Operating Conditions, POUT = 650 W Peak Freq Gain Eff. Droop +1dB OD VSWR-S VSWR-T 1030 1090 1150 1215 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000912-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 960-1215 MHz, 128 us Pulse, 10% Duty Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop VDD = 50 V, IDQ = 500 mA, Pulse Width = 128 us, Duty Cycle = 10%, POUT = 650 W Peak 65 W avg. Droop Load Mismatch Stability VSWR-S - Load Mismatch Tolerance VSWR-T - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 90 mA Forward Transconductance VDS = 5 V, ID = 21 mA

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MAGX-000912-650L0x

GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 960-1215 MHz, 128 us Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• 50 V Operation
• 800 W Performance at 20 µs and 6% Duty Factor
• RoHS* Compliant and 260 °C Reflow Compatible
• MTTF = 600 years TJ < 200 °C
• L-Band pulsed radar.

The MAGX-000912-650L00 and MAGX-000912-650L0S are gold metalized matched gallium nitride GaN on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

MAGX-000912-650L00

MAGX-000912-650L0S
Ordering Information

MAGX-000912-650L00

Standard Flange

MAGX-000912-650L0S

Earless Flange

MAGX-A00912-650L00
960 - 1215 MHz Evaluation Board1
When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices

Typical RF Performance under Standard Operating Conditions, POUT = 650 W Peak

Freq

Gain

Eff.

Droop +1dB OD VSWR-S VSWR-T
1030
1090
1150
1215
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000912-650L0x

GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 960-1215 MHz, 128 us Pulse, 10% Duty

Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

Power Gain

Drain Efficiency Pulse Droop

VDD = 50 V, IDQ = 500 mA,

Pulse Width = 128 us, Duty Cycle = 10%,

POUT = 650 W Peak 65 W avg.

Droop

Load Mismatch Stability

VSWR-S -

Load Mismatch Tolerance

VSWR-T -

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current

VGS = -8 V, VDS = 175 V

Gate Threshold Voltage

VDS = 5 V, ID = 90 mA

Forward Transconductance

VDS = 5 V, ID = 21 mA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000912-650L0S Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000912-650L0S 646878