MAGX-000912-125L00

MAGX-000912-125L00 Datasheet

MAGX-000912-125L00

Part	Datasheet
MAGX-000912-125L00	MAGX-000912-125L00 (pdf)

Related Parts	Information
MAGX-000912-SB0PPR	MAGX-000912-SB0PPR

PDF Datasheet Preview
MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125 W Peak, 960-1215 MHz, 128 µs Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics. • Military radar for IFF and Data Links. The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number MAGX-000912-125L00 125W GaN Power Transistor MAGX-000912-SB0PPR Evaluation Test Fixture Typical RF Performance under Standard Operating Conditions, POUT = 125 W Peak Freq Gain Eff. Droop VSWR-S VSWR-T 10:1 1030 1090 1150 1215 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125 W Peak, 960-1215 MHz, 128 µs Pulse, 10% Duty Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain VDD = 50 V, IDQ = 100 mA, Drain Efficiency Pulse Width = 128 us, Duty Cycle = 10%, ηD Load Mismatch Stability POUT = 125 W Peak W avg. VSWR-S - Load Mismatch Tolerance VSWR-T - 10:1 Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics

PDF Datasheet Preview

MAGX-000912-125L00

GaN on SiC HEMT Pulsed Power Transistor 125 W Peak, 960-1215 MHz, 128 µs Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260 °C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 years TJ < 200 °C
• Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics.
• Military radar for IFF and Data Links.

The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

Part Number MAGX-000912-125L00
125W GaN Power Transistor

MAGX-000912-SB0PPR Evaluation Test Fixture

Typical RF Performance under Standard Operating Conditions, POUT = 125 W Peak

Freq

Gain

Eff.

Droop VSWR-S VSWR-T
10:1
1030
1090
1150
1215
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000912-125L00

GaN on SiC HEMT Pulsed Power Transistor 125 W Peak, 960-1215 MHz, 128 µs Pulse, 10% Duty

Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

Power Gain

VDD = 50 V, IDQ = 100 mA,

Drain Efficiency

Pulse Width = 128 us, Duty Cycle = 10%, ηD

Load Mismatch Stability

POUT = 125 W Peak W avg.

VSWR-S -

Load Mismatch Tolerance

VSWR-T -
10:1

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Forward Transconductance Dynamic Characteristics

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Datasheet ID: MAGX-000912-125L00 646875