MAGX-000245-014000

MAGX-000245-014000 Datasheet


MAGX-000245-014000

Part Datasheet
MAGX-000245-014000 MAGX-000245-014000 MAGX-000245-014000 (pdf)
Related Parts Information
MAGX-S00245-014000 MAGX-S00245-014000 MAGX-S00245-014000
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MAGX-000245-014000

GaN on SiC HEMT Power Transistor 14 W, DC - GHz, CW Power
• GaN on SiC Depletion Mode Transistor
• Common-Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Cu/W Package
• RoHS* Compliant
• +50V Typical Operation
• MTTF = 600 years TJ < 200°C

Primary Applications
• RF Lighting
• RF Plasma Generation
• RF Heating
• RF Drying
• Material Processing
• Power Industrial Equipment
• ISM
• Broadcast
• MILCOM
• Datalinks
• Air Traffic Control Radar - Commercial
• Weather Radar - Commercial
• Military Radar - Military

The MAGX-000245-014000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor suitable for CW applications centered at 2.45GHz for application in ISM/Broadcast/Plasma applications. This product differentiates itself from other GaN power transistors in that it runs well in CW. The matching network is compact and small. The frequency of operation covers DC - GHz which captures commercial as well as military applications. This product is designed as a high power driver amplifier or final stage depending on the application. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000245 -014000 is constructed using a thermally enhanced Cu/W flanged ceramic package which provides excellent thermal performance.

MAGX-000245-014000
Ordering Information

MAGX-000245-014000

Bulk Packaging

MAGX-S00245-014000 Sample Board GHz
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

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MAGX-000245-014000

GaN on SiC HEMT Power Transistor 14 W, DC - GHz, CW Power

Electrical Specifications1 Freq. = 2450 MHz, TA = 25°C

Parameter

Test Conditions

RF Functional Tests VDD = +50 V, IDQ = 15 mA, CW Operation

Input Power

POUT= 14 W

Power Gain Drain Efficiency 2nd Harmonics 3rd Harmonics

POUT= 14 W POUT= 14 W POUT= 14 W POUT= 14 W

Load Mismatch Stability

POUT= 14 W

Load Mismatch Tolerance

POUT= 14 W

Symbol Min.

PIN GP ηD 2Fc 3Fc VSWR-S VSWR-T

Typ.
57 -50 -49 5:1 10:1

Max. Units

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current

VGS = -8 V, VDS = 175 V

Gate Threshold Voltage

VDS = 5 V, ID = 2 mA

Forward Transconductance Dynamic Characteristics

VDS = 5 V, ID = 500 mA

VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

Symbol Min.

IDS VGS TH

CISS

COSS
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Datasheet ID: MAGX-000245-014000 646873