MAGX-S10035-045000

MAGX-S10035-045000 Datasheet

MAGX-000035-045000

Part	Datasheet
MAGX-S10035-045000	MAGX-S10035-045000 (pdf)

Related Parts	Information
MAGX-000035-045000	MAGX-000035-045000

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MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty • GaN on SiC Depletion Mode Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS* Compliant • +50V Typical Operation • MTTF = 600 years TJ < 200°C Application • Civilian and Military Pulsed Radar MAGX-000035-045000 The MAGX-000035-045000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for civilian and military radar pulsed applications between DC 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000035045000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number MAGX-000035-045000 Description Bulk Packaging MAGX-S10035-045000 Sample Board - GHz 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Electrical Specifications1 Freq. = 2700-3500 MHz, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty Output Power PIN= 4 W POUT Power Gain PIN= 4 W Drain Efficiency PIN= 4 W Input Return Loss PIN= 4 W Load Mismatch Stability PIN= 4 W VSWR-S Load Mismatch Tolerance PIN= 4 W VSWR-T 45 48 Electrical Specifications1 Freq. = 1030-1090 MHz, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty Output Power PIN= W POUT Power Gain PIN= W Drain Efficiency

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MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty
• GaN on SiC Depletion Mode Transistor
• Common-Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Cu/Mo/Cu Package
• RoHS* Compliant
• +50V Typical Operation
• MTTF = 600 years TJ < 200°C

Application
• Civilian and Military Pulsed Radar

MAGX-000035-045000

The MAGX-000035-045000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for civilian and military radar pulsed applications between DC 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000035045000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

Part Number MAGX-000035-045000

Description Bulk Packaging

MAGX-S10035-045000 Sample Board - GHz
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Electrical Specifications1 Freq. = 2700-3500 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min.

RF Functional Tests VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty

Output Power

PIN= 4 W

POUT

Power Gain

PIN= 4 W

Drain Efficiency

PIN= 4 W

Input Return Loss

PIN= 4 W

Load Mismatch Stability

PIN= 4 W

VSWR-S

Load Mismatch Tolerance

PIN= 4 W

VSWR-T
45 48

Electrical Specifications1 Freq. = 1030-1090 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min.

RF Functional Tests VDD = 50 V, IDQ = 100 mA, 1 ms Pulse, 10% Duty

Output Power

PIN= W

POUT

Power Gain

PIN= W

Drain Efficiency

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Datasheet ID: MAGX-S10035-045000 646869