MA4PBL027

MA4PBL027 Datasheet

MA4PBL027

Part	Datasheet
MA4PBL027	MA4PBL027 (pdf)

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MA4PBL027 HMIC Silicon Beamlead PIN Diode No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver The MA4PBL027 is a silicon beamlead PIN diode fabricated with M/A-COM Technology Solutions HMIC process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The low bias levels of +10 mA in the low loss state and 0v in the isolation state allows the use of a simple + 5V TTL gate driver. These diodes can be used as switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. MA4PBLP027 Topside Bottom Absolute Maximum Ratings TAMB = 25°C unless otherwise specified Parameter Absolute Maximum Forward Current 100 mA Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C RF C.W. Incident Power 30 dBm C.W. RF & DC Dissipated Power 150 mW Mounting Temperature 235°C for 10 sec. ADVANCED Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel / Fax: development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has • Europe Tel / Fax • Asia/Pacific Tel / Fax: Visit for additional data sheets and product information. been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. M/A-COM Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. MA4PBL027 HMIC Silicon Beamlead PIN Diode Electrical Specifications at TAMB = 25°C Test Conditions Total Capacitance GHz 1 Forward Resistance +20mA/10 GHz 2 Forward Voltage at +10mA Leakage Current at V Minority Carrier Lifetime Paramters Ct Rs Vf Ir TL Units fF Ohms Volts nA nS Min Typical Max. Ordering Information Part Number MA4PBL027 Packaging Gel Pak/100pcs ADVANCED Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel / Fax: development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has • Europe Tel / Fax • Asia/Pacific Tel / Fax: Visit for additional data sheets and product information. been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. M/A-COM Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

PDF Datasheet Preview

MA4PBL027

HMIC Silicon Beamlead PIN Diode

No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver

The MA4PBL027 is a silicon beamlead PIN diode fabricated with M/A-COM Technology Solutions HMIC process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed.

The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The low bias levels of +10 mA in the low loss state and 0v in the isolation state allows the use of a simple + 5V TTL gate driver. These diodes can be used as switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.

MA4PBLP027

Topside

Bottom

Absolute Maximum Ratings TAMB = 25°C
unless otherwise specified

Parameter

Absolute Maximum

Forward Current
100 mA

Operating Temperature
-55°C to +125°C

Storage Temperature
-55°C to +150°C

Junction Temperature
+175°C

RF C.W. Incident Power
30 dBm C.W.

RF & DC Dissipated Power
150 mW

Mounting Temperature
235°C for 10 sec.

ADVANCED Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel / Fax:
development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Visit for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

MA4PBL027

HMIC Silicon Beamlead PIN Diode

Electrical Specifications at TAMB = 25°C

Test Conditions Total Capacitance GHz 1 Forward Resistance +20mA/10 GHz 2 Forward Voltage at +10mA Leakage Current at V Minority Carrier Lifetime

Paramters Ct Rs Vf Ir TL

Units fF

Ohms Volts nA nS

Min Typical Max.
Ordering Information

Part Number MA4PBL027

Packaging Gel Pak/100pcs

ADVANCED Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel / Fax:
development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Visit for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MA4PBL027 Datasheet file may be downloaded here without warranties.

Datasheet ID: MA4PBL027 646851