• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540
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JANTX2N6299 (pdf) |
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PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 • TO-66 TO-213AA Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation TC = +25 °C TC = +100 °C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N6298 60 2N6299 80 64 32 -65 to +175 Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case 1 Derate linearly mW/°C for TC > +25°C Maximum Units Vdc mAdc Adc W °C Units °C/W Electrical Characteristics TC = 25°C unless otherwise noted OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N6298 2N6299 Collector - Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc Collector - Emitter Cutoff Current VCE = 60 Vdc, VBE = Vdc VCE = 80 Vdc, VBE = Vdc Emitter - Base Cutoff Current VEB = Vdc 2N6298 2N6299 2N6298 2N6299 Symbol V BR CEO ICEO ICEX IEBO Mimimum 60 80 --- Maximum --- Units Vdc mAdc uAdc mAdc 2N6298 & 2N6299 Electrical Characteristics -con’t ON Characteristics 1 Forward Current Transfer Ratio IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc Collector - Emitter Saturation Voltage IC = Adc, IB = 16 mAdc IC = Adc, IB = 80 mAdc Base - Emitter Saturation Voltage IC = Adc, IB = 80 mVdc Base-Emitter Voltage IC = Adc, VCE = Vdc |
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