JANTX2N5339
JANTX2N5339 Datasheet
• Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/560
| Part | Datasheet |
|---|---|
JANTX2N5339 |
JANTX2N5339 (pdf) |
| Related Parts | Information |
|---|---|
JANTXV2N5339 |
JANTXV2N5339 |
| PDF Datasheet Preview |
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| NPN Power Silicon Transistor 2N5339 • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation TA = 25 °C TC = 25 °C Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Value 100 -65 to +200 10 Units Vdc Adc W °C °C/W Electrical Characteristics OFF Characteristics Collector - Emitter Breakdown Voltage IC = 50 mAdc Collector - Emitter Cutoff Current VCE = 100 Vdc Collector - Emitter Cutoff Current VCE = 90 Vdc, VBE = Vdc Collector-8ase Cutoff Current VCB = 100 Vdc Emitter - Base Cutoff Current VEB = Vdc ON Characteristics Forward Current Transfer Ratio IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc Collector - Emitter Saturation Voltage IC = Adc, IB = Adc IC = Adc, IB = Adc Base - Emitter Saturation Voltage IC = Adc, IB = Adc IC = Adc, IB = Adc Symbol V BR CEO ICEO ICEX ICBO IEBO Mimimum 100 --------- Maximum --100 Units Vdc uAdc VCE sat VBE sat --240 --- |
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