M29W400T M29W400B Flash Memory Datasheet

M29W400T M29W400B

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME 90ns FAST PROGRAMMING TIME - 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte or Word-by-Word - Status Register bits and Ready/Busy Output MEMORY BLOCKS - Boot Block (Top or Bottom location) - Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION - Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1ppm/year ELECTRONIC SIGNATURE - Manufacturer Code 0020h - Device Code, M29W400T 00EEh - Device Code, M29W400B 00EFh

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