DST860S

DST860S Datasheet

DST860S

Part	Datasheet
DST860S	DST860S (pdf)

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DST860S Schottky Barrier Rectifier DST860S, 8A, 60V, TO-277B, Single RoHS Pb e3 Pin out Cathode Anode 1 Anode 2 Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. • low forward voltage drop • frequency operation • Level 1 - unlimited • junction temperature capability • MOS Schottky technology • die in TO-277B Package • E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01 Maximum Ratings Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge Current Symbol VRWM IF AV IFSM • mode power supply • converters • ree-Wheeling diodes • olarity Protection Diodes Test Conditions - 50% duty cycle = 125 °C rectangular wave form ms, half Sine pulse Max 60 8 Unit V A Electrical Characteristics Parameters Forward Voltage Drop* VF2 IR1 IR2 CT Test Conditions Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C = 5V, TC = 25 °C, fSIG = 1MHz Typ 10 502 Max - Unit V mA pF 2017 Littelfuse, Inc Specifications are subject to change without notice. Schottky Barrier Rectifier DST860S, 8A, 60V, TO-277B, Single Thermal-Mechanical Specifications Parameters Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Maximum Thermal Resistance

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DST860S

Schottky Barrier Rectifier DST860S, 8A, 60V, TO-277B, Single

RoHS Pb e3

Pin out

Cathode

Anode 1 Anode 2

Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.

It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes.
• low forward voltage drop
• frequency operation
• Level 1 - unlimited
• junction temperature capability
• MOS Schottky technology
• die in TO-277B Package
• E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01

Maximum Ratings

Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge

Current

Symbol VRWM IF AV

IFSM
• mode power supply
• converters
• ree-Wheeling diodes
• olarity Protection Diodes

Test Conditions -
50% duty cycle = 125 °C rectangular wave form
ms, half Sine pulse

Max 60 8

Unit V A

Electrical Characteristics Parameters

Forward Voltage Drop*

VF2 IR1 IR2 CT

Test Conditions

Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C = 5V, TC = 25 °C, fSIG = 1MHz

Typ 10 502

Max -

Unit V
mA pF
2017 Littelfuse, Inc Specifications are subject to change without notice.

Schottky Barrier Rectifier DST860S, 8A, 60V, TO-277B, Single

Thermal-Mechanical Specifications

Parameters Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Maximum Thermal Resistance

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Datasheet ID: DST860S 646467