DST860S-A

DST860S-A Datasheet

DST860S-A

Part	Datasheet
DST860S-A	DST860S-A (pdf)

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DST860S-A Schottky Barrier Rectifier DDSSTT856806S0S, 8-AA,,86A0,V6, T0OV,-T2O77-2B7, 7SBin, gSliengle RoHS Pb e3 Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. Pin out Cathode Anode 1 Anode 2 • i reliability application and automotive grade AEC-Q101 qualified • ltra low forward voltage drop • igh frequency operation • SL Level 1 - unlimited • igh junction temperature capability • MOS Schottky technology • die in TO-277B Package • E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01 Maximum Ratings Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge Current Symbol VRWM IF AV IFSM • mode power supply • converters • diodes • Protection Diodes Test Conditions - 50% duty cycle = 125 °C rectangular wave form ms, half Sine pulse Max 60 8 Unit V A Electrical Characteristics Parameters Forward Voltage Drop* VF2 IR1 IR2 CT Test Conditions Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C = 5V, TC = 25 °C, fSIG = 1MHz Typ 10 502 Max - Unit V mA pF 2017 Littelfuse, Inc Specifications are subject to change without notice. Schottky Barrier Rectifier DDSSTT856806S0S, 8-AA,,86A0,V6, T0OV,-T2O77-2B7, 7SBin, gSliengle Thermal-Mechanical Specifications

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DST860S-A

Schottky Barrier Rectifier DDSSTT856806S0S, 8-AA,,86A0,V6, T0OV,-T2O77-2B7, 7SBin, gSliengle

RoHS Pb e3

Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products.

It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes.

Pin out

Cathode

Anode 1 Anode 2
• i reliability application and automotive grade AEC-Q101 qualified
• ltra low forward voltage drop
• igh frequency operation
• SL Level 1 - unlimited
• igh junction temperature capability
• MOS Schottky technology
• die in TO-277B Package
• E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin Sn IPC/ JEDEC J-STD609A.01

Maximum Ratings

Parameters Peak Inverse Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge

Current

Symbol VRWM IF AV

IFSM
• mode power supply
• converters
• diodes
• Protection Diodes

Test Conditions -
50% duty cycle = 125 °C rectangular wave form
ms, half Sine pulse

Max 60 8

Unit V A

Electrical Characteristics Parameters

Forward Voltage Drop*

VF2 IR1 IR2 CT

Test Conditions

Pulse, TJ = 25 °C Pulse, TJ = 25 °C Pulse, TJ = 125 °C Pulse, TJ = 125 °C = rated VR, TJ = 25 °C = rated VR, TJ = 125 °C = 5V, TC = 25 °C, fSIG = 1MHz

Typ 10 502

Max -

Unit V
mA pF
2017 Littelfuse, Inc Specifications are subject to change without notice.

Schottky Barrier Rectifier DDSSTT856806S0S, 8-AA,,86A0,V6, T0OV,-T2O77-2B7, 7SBin, gSliengle

Thermal-Mechanical Specifications

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived DST860S-A Datasheet file may be downloaded here without warranties.

Datasheet ID: DST860S-A 646466