HSDL-4270 High-Performance 5mm AlGaAs Infrared 940nm Lamp
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HSDL-4270 (pdf) |
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HSDL-4270 High-Performance 5mm AlGaAs Infrared 940nm Lamp Datasheet The HSDL-4270 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide AlGaAs LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear 5mm package. • High Power AlGaAs LED Technology • 940 nm Wavelength • Package • Low Cost • Low Forward Voltage 1.3V at 20mA • Industrial Infrared Equipments and Applications Smoke Detectors etc • Consumer Electronics Infrared Remote Controller etc • Infrared spotlight for cameras • Discrete Interrupters • Infrared source for optical counters and card readers max. HSDL-4270 Lead Form Shipping Option Straight Bulk min. CATHODE FLAT min. Absolute Maximum Ratings at 25°C Parameter Peak Forward Current Symbol Minimum IFPK Notes Derate as shown in Figure IFDC PDISS Recommended Operating Conditions Parameter Operating Temperature Maximum 500 100 170 100 110 260 for 5 sec Unit Reference Figure 3 Duty cycle = 20% Pulse Width = 100us IR=100uA Unit Reference Electrical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage Forward Voltage |
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