V30BZ682M1SX

V30BZ682M1SX Datasheet

V30BZ102M6SX 1nF ±20% 200WVDC

Part	Datasheet
V30BZ682M1SX	V30BZ682M1SX (pdf)

Related Parts	Information
V30BZ472M1SX	V30BZ472M1SX
V30BZ102M6SX	V30BZ102M6SX
V30BZ103M1SX	V30BZ103M1SX
V30BZ222M8SX	V30BZ222M8SX

PDF Datasheet Preview
V Series Single Layer Capacitors Specification - V Series Capacitors Part Number Capacitance Voltage Dissipation Factor 1MHz V30BZ102M6SX 1nF ±20% 200WVDC V30BZ222M8SX 2.2nF ±20% 150WVDC V30BZ472M1SX 4.7nF ±20% 100WVDC V30BZ682M1SX 6.8nF ±20% 100WVDC V30BZ103M1SX 10nF ±20% 100WVDC Metal thickness is min. 100µ” of Au over min. 50µ” of Ni V30BZ102M6SX V30BZ222M8SX V30BZ472M1SX V30BZ682M1SX V30BZ103M1SX Length 0.762mm ±0.076mm Dimensions Width 0.762mm ±0.076mm Insulation Resistance +25C +125C 103 MΩ 102 MΩ 103 MΩ 102 MΩ 103 MΩ 102 MΩ 103 MΩ 102 MΩ 103 MΩ 102 MΩ Thickness 0.559mm ±0.0762mm Class II dielectric material with X7R characteristics for DC Blocking or RF Bypass applications in a broad frequency range. These high frequency, wire bondable single layer capacitors are perfect for GaN and GaAs amplifier applications where small size and microwave performance is key to a well performing circuit. l X7R Temperature Stability l Excellent high frequency response l Wire Bondable l RoHS compliant l High capacitance in a small footprint l MSL-1 l Rated Operating/Storage Temp. -55 to +125ºC l DC Blocking l RF Bypassing l Filtering l Tuning l Coupling l High Capacitance Density l Up to 10nF in 30 mil square size l Up to 200WVDC for high powered system needs l Can be epoxy or AuSn solder mounted Part Number Identification Product V= V-Series 30 BZ Case Size 30 Material BZ X7R

PDF Datasheet Preview

V Series Single Layer Capacitors

Specification - V Series Capacitors

Part Number Capacitance Voltage

Dissipation Factor
1MHz

V30BZ102M6SX 1nF ±20% 200WVDC

V30BZ222M8SX 2.2nF ±20% 150WVDC

V30BZ472M1SX 4.7nF ±20% 100WVDC

V30BZ682M1SX 6.8nF ±20% 100WVDC

V30BZ103M1SX 10nF ±20% 100WVDC

Metal thickness is min. 100µ” of Au over min. 50µ” of Ni

V30BZ102M6SX V30BZ222M8SX V30BZ472M1SX V30BZ682M1SX V30BZ103M1SX

Length
0.762mm ±0.076mm

Dimensions Width
0.762mm ±0.076mm

Insulation Resistance
+25C +125C
103 MΩ
102 MΩ
103 MΩ
102 MΩ
103 MΩ
102 MΩ
103 MΩ
102 MΩ
103 MΩ
102 MΩ

Thickness
0.559mm ±0.0762mm

Class II dielectric material with X7R characteristics for DC Blocking or RF Bypass applications in a broad frequency range. These high frequency, wire bondable single layer capacitors are perfect for GaN and GaAs amplifier applications where small size and microwave performance is key to a well performing circuit.
l X7R Temperature Stability l Excellent high frequency response l Wire Bondable l RoHS compliant l High capacitance in a small footprint l MSL-1 l Rated Operating/Storage Temp. -55 to +125ºC
l DC Blocking l RF Bypassing l Filtering l Tuning l Coupling
l High Capacitance Density l Up to 10nF in 30 mil square size l Up to 200WVDC for high powered
system needs l Can be epoxy or AuSn solder mounted

Part Number Identification

Product V=

V-Series
30 BZ

Case Size 30

Material BZ X7R

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Datasheet ID: V30BZ682M1SX 645003