MWI 300-12 E9
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MWI300-12E9 (pdf) |
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MWI 300-12 E9 IGBT Modules Sixpack 15 28 16 29 13 14 20 21 22 11/12 18 19 25 26 27 9/10 23 24 IC80 = 375 A VCES = 1200 V V = CE sat typ. V E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC SCSOA Ptot VCE sat VGE th ICES IGES td on tr td off tf Eon Eoff Cies QGon RthJC Conditions TVJ = 25°C to 125°C Maximum Ratings 1200 V t• NPT3 IGBT technology • low saturation voltage • low switching losses TC = 25°C ± 20 530 uV • square RBSOA, no latch up • high short circuit capability A • positive temperature coefficient for TC = 80°C RG = TVJ = 125°C Clamped inductive load L = 100 µH o VCE = 900 V VGE = ±15 V RG = - TVJ = 125°C non-repetitive VCEmax < VCES TC = 25°C 375 A ICM = 750 VCEK < VCES 10 µs e Conditions a s IC = 300 A VGE = 15 V h IC = 12 mA VGE = VCE Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. TVJ = 25°C TVJ = 125°C easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate |
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