MWI300-12E9

MWI300-12E9 Datasheet


MWI 300-12 E9

Part Datasheet
MWI300-12E9 MWI300-12E9 MWI300-12E9 (pdf)
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MWI 300-12 E9

IGBT Modules Sixpack
15 28 16
29 13 14
20 21 22
11/12
18 19
25 26 27
9/10
23 24

IC80
= 375 A

VCES = 1200 V

V = CE sat typ. V

E72873

See outline drawing for pin arrangement

IGBTs Symbol VCES VGES IC25 IC80 RBSOA
tSC SCSOA Ptot

VCE sat

VGE th ICES

IGES td on tr td off tf Eon Eoff Cies QGon RthJC

Conditions TVJ = 25°C to 125°C

Maximum Ratings 1200 V
t• NPT3 IGBT technology
• low saturation voltage
• low switching losses

TC = 25°C
± 20 530
uV
• square RBSOA, no latch up
• high short circuit capability A
• positive temperature coefficient for

TC = 80°C

RG = TVJ = 125°C Clamped inductive load L = 100 µH
o VCE = 900 V VGE = ±15 V RG = - TVJ = 125°C non-repetitive VCEmax < VCES

TC = 25°C
375 A

ICM = 750

VCEK < VCES
10 µs
e Conditions a s IC = 300 A VGE = 15 V h IC = 12 mA VGE = VCE

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.

TVJ = 25°C TVJ = 125°C
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
More datasheets: SP0504BAHT | SP0503BAHT | SP0502BAHT | SP0505BAHT | 59334-123LF | 59334-023LF | 59334-022LF | 59334-013LF | 59334-002LF | 59334-003LF


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Datasheet ID: MWI300-12E9 644411