MWI100-12T8T
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MWI100-12T8T (pdf) |
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Six-Pack Trench IGBT Part name MWI100-12T8T VCES = 1200 V IC25 = 145 A VCE sat = V 30, 31, 32 20 3 4 33, 34, 35 6 27 29 10 24 25 26 21 22 23 13, 14, 15 E72873 Pin see outlines. Features: Application: Package: IXYS reserves the right to change limits, test conditions and dimensions. 2015 IXYS All rights reserved 20150123d MWI100-12T8T Ouput Inverter T1 - T6 VCES VGES VGEM IC25 IC80 collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current Ptot VCE sat total power dissipation collector emitter saturation voltage VGE th ICES gate emitter threshold voltage collector emitter leakage current IGES Cies QG on td on tr td off tf Eon Eoff RBSOA gate emitter leakage current input capacitance total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse SCSOA tSC ISC RthJC short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case Ordering Standard Part Name Marking on Product Delivering Mode Base Qty Ordering Code 502294 IXYS reserves the right to change limits, test conditions and dimensions. 2015 IXYS All rights reserved 20150123d MWI100-12T8T Inverter T1 - T6 200 VGE = 15 V IC 120 [A] 80 TVJ = 25°C TVJ = 125°C VCE [V] Fig. 1 Typ. output characteristics VGE = 13 V IC 120 [A] 80 TVJ = 125°C VCE [V] Fig. 2 output characteristics 200 160 IC 120 [A] 80 TVJ = 25°C TVJ = 125°C 0 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 3 Typ. transfer characteristics 20 IC = 100 A VCE = 600 V VGE 12 [V] 8 0 100 200 300 400 500 600 700 800 QG [nC] Fig. 4 Typ. turn-on gate charge VCE = 600 V VGE = ±15 V Eoff 20 RG = : TVJ = 125°C [mJ] 12 Erec IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. 2015 IXYS All rights reserved VCE = 600 V 20 VGE = ±15 V IC = 100 A 16 TVJ = 125°C Eoff |
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