Part name Marking on product MUBW45-12T6K
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MUBW45-12T6K (pdf) |
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Converter - Brake - Inverter Module CBI 1 Trench IGBT Preliminary data Part name Marking on product MUBW45-12T6K MUBW45-12T6K Three Phase Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 151 A IC25 = 19 A IC25 = 43 A IFSM = 320 A VCE sat = V VCE sat = V E72873 Pin see outlines. Features: • High level of integration - only one power semiconductor module required for the whole drive • Inverter with Trench IGBTs - low saturation voltage Application: AC motor drives with • Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation Package: • UL registered • Industry standard E1-pack IXYS reserves the right to change limits, test conditions and dimensions. 2013 IXYS All rights reserved 20130626c MUBW45-12T6K Ouput Inverter T1 - T6 VCES VGES VGEM IC25 IC80 Ptot VCE sat collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage VGE th ICES gate emitter threshold voltage collector emitter leakage current IGES Cies QG on td on tr td off tf Eon Eoff gate emitter leakage current input capacitance total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse tSC SCSOA RthJC RthCH short circuit safe operating area thermal resistance junction to case thermal resistance case to heatsink Ordering Standard Part Name MUBW 45-12T6K Marking on Product Delivering Mode Base Qty Ordering Code MUBW45-12T6K 500 131 IXYS reserves the right to change limits, test conditions and dimensions. 2013 IXYS All rights reserved 20130626c MUBW45-12T6K 50 40 30 <"> 20 TVJ = 25°C TVJ = 125°C VGE = 15 V 60 <"> 40 13 V 11 V 50 40 30 <"> 20 TVJ = 25°C TVJ = 125°C Fig. 1 Typ. output characteristics TVJ = 125°C 0 Fig. 2 Typ. output characteristics Fig. 3 Typ. tranfer characteristics 20 VCE = 600 V IC = 25 A 7 & 10 7 VGE = ±15 V 6 VCE = 600 V RG = 39 Ω 5 TVJ = 125°C [mJ] 3 Eoff Eon VGE = ±15 V VCE = 600 V IC = 25 A TVJ = 125°C [mJ] Eoff 0 50 100 150 200 250 Fig.4 Typ. turn-on gate charge 0 10 20 30 40 50 60 Fig. 5 Typ. switching energy vs. collector current 20 40 60 80 100 120 Fig. 6 Typ. switching energy vs. gate resistance Fig. 7 Typ. transient thermal impedance IGBT IXYS reserves the right to change limits, test conditions and dimensions. 2013 IXYS All rights reserved IF 30 |
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