MMIX1F520N075T2
MMIX1F520N075T2 Datasheet
MMIX1F520N075T2
| Part | Datasheet |
|---|---|
MMIX1F520N075T2 |
MMIX1F520N075T2 (pdf) |
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| Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS = ID25 = RDS on 75V 500A 1.6mΩ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS VDGR VGSS VGSM ID25 IDM IA EAS TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm in. from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings ±20 ±30 1700 -55 +175 -55 +175 2500 N/lb. g Test Conditions TJ = 25°C, Unless Otherwise Specified BVDSS VGS = 0V, ID = 3mA VGS th VDS = VGS, ID = 8mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS on VGS = 10V, ID = 100A, Note 1 Characteristic Values |
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