MIO600-65E11

MIO600-65E11 Datasheet

MIO 600-65E11

Part	Datasheet
MIO600-65E11	MIO600-65E11 (pdf)

Related Parts	Information
MIO 600-65E11	MIO 600-65E11

PDF Datasheet Preview
MIO 600-65E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 600 A VCES = 6500 V VCE sat typ = V IGBT Symbol VCES VGES IC85 ICM t VCE sat VGE th ICES IGES tFeatures Conditions u VGE= 0 V o TC = 85°C - tp = 1 ms TC = 85°C V= CC 4400 VCEM CHIP 6500 e VGE < 15 V TVJ < 125°C Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator IC = 600 A VGE = 15 V TVJ = 25°C TVJ = 125°C h IC = 240 mA VCE = VGE p VCE = 6500 V VGE = 0 V TVJ = 125°C 120 mA VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA t d on tr td off tf Eon Eoff Inductive load TVJ = 125°C VGE = ±15 V VCC = 3600 V; IC = 600 A = 280 nH RG = Ω RG = Ω RG = Ω RG = Ω RG = Ω RG = Ω 1500 4250

PDF Datasheet Preview

MIO 600-65E11

IGBT Module Single switch

Short Circuit SOA Capability Square RBSOA

IC80
= 600 A

VCES = 6500 V

VCE sat typ = V

IGBT Symbol VCES VGES IC85 ICM t

VCE sat

VGE th ICES IGES
tFeatures

Conditions
u VGE= 0 V
o TC = 85°C
- tp = 1 ms TC = 85°C

V= CC
4400

VCEM CHIP
6500
e VGE < 15 V TVJ < 125°C

Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs
a s Conditions

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.
• IGBT - Low-loss - Smooth switching waveforms for good EMC
• Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
• AC power converters for - industrial drives - windmills - traction
• LASER pulse generator

IC = 600 A VGE = 15 V TVJ = 25°C TVJ = 125°C
h IC = 240 mA VCE = VGE p VCE = 6500 V VGE = 0 V TVJ = 125°C
120 mA

VCE = 0 V VGE = ± 20 V TVJ = 125°C
500 nA
t d on
tr td off tf Eon

Eoff

Inductive load TVJ = 125°C VGE = ±15 V VCC = 3600 V;

IC = 600 A = 280 nH

RG = Ω RG = Ω RG = Ω RG = Ω RG = Ω RG = Ω
1500
4250

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Datasheet ID: MIO600-65E11 644374