MWI100-12E8

MWI100-12E8 Datasheet

MWI 100-12 E8 MKI 100-12 E8

Part	Datasheet
MWI100-12E8	MWI100-12E8 (pdf)

Related Parts	Information
MKI100-12E8	MKI100-12E8

PDF Datasheet Preview
MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 165 A V CES = 1200 V VCE sat typ. = V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t Ptot VCE sat V GE th ICES IGES t tr td off tf Eon Eoff Cies QGon R thJC 13, 21 13, 21 17 15 4 14, 20 14, 20 E72873 See outline drawing for pin arrangement Conditions Maximum Ratings tFeatures • NPT3 IGBTs - low saturation voltage TVJ = 25°C to 150°C 1200 ± 20 u TC = 25°C TC = 80°C o VGE = ±15 V RG = 12 Ω TVJ = 125°C - RBSOA clamped inductive load L = 100 µH VCES ±15 125°C e SCSOA non-repetitive TC = 25°C a s Conditions

PDF Datasheet Preview

MWI 100-12 E8 MKI 100-12 E8

IGBT Modules Sixpack, H Bridge

Short Circuit SOA Capability Square RBSOA

IC25
= 165 A

V CES
= 1200 V

VCE sat typ. = V

IGBTs

Symbol VCES VGES IC25 IC80 ICM VCEK t

Ptot

VCE sat

V GE th

ICES

IGES t
tr td off tf Eon Eoff Cies QGon R
thJC
13, 21
13, 21
17 15
4 14, 20
14, 20

E72873

See outline drawing for pin arrangement

Conditions

Maximum Ratings
tFeatures
• NPT3 IGBTs - low saturation voltage

TVJ = 25°C to 150°C
1200
± 20
u TC = 25°C

TC = 80°C
o VGE = ±15 V RG = 12 Ω TVJ = 125°C
- RBSOA clamped inductive load L = 100 µH

VCES
±15
125°C
e SCSOA non-repetitive

TC = 25°C
a s Conditions

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Datasheet ID: MWI100-12E8 644359