IXTH10P50
IXTH10P50 Datasheet
IXTH/IXTT 10P50 IXTH/IXTT 11P50
| Part | Datasheet |
|---|---|
IXTH10P50 |
IXTH10P50 (pdf) |
| Related Parts | Information |
|---|---|
IXTT10P50 |
IXTT10P50 |
| PDF Datasheet Preview |
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| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH/IXTT 10P50 IXTH/IXTT 11P50 VDSS I R D25 DS on -500 V -10 A -500 V -11 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -500 -500 ±20 ±30 10P50 -10 11P50 -11 10P50 -40 11P50 -44 10P50 -10 11P50 -11 -55 +150 -55 +150 TO-247 AD IXTH D TO-268 IXTT Case Style G = Gate S = Source D = Drain TAB = Drain Maximum lead temperature for soldering mm in. from case for 10 s Mounting torque TO-247 TO-247 AD TO-268 Nm/lb.in. Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified |
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