IXTT12N140
IXTT12N140 Datasheet
IXTT12N140 IXTH12N140
| Part | Datasheet |
|---|---|
IXTT12N140 |
IXTT12N140 (pdf) |
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| Advance Technical Information High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTT12N140 IXTH12N140 VDSS = ID25 = RDS on 1400V 12A 2Ω TO-268 IXTT VDSS VDGR VGSS VGSM ID25 IDM IA EAS TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm in. From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1400 1400 ±20 ±30 - 55 +150 - 55 +150 Nm/lb.in. Test Conditions TJ = 25°C, Unless Otherwise Specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 250uA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 Characteristic Values Min. Typ. Max. 1400 ±100 nA |
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