IXKP13N60C5M

IXKP13N60C5M Datasheet

IXKP 13N60C5M

Part	Datasheet
IXKP13N60C5M	IXKP13N60C5M (pdf)

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IXKP 13N60C5M CoolMOS 1 Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID25 VDSS = 600 V R = DS on max Ω TO-220 FP MOSFET VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = A TC = 25°C MOSFET dV/dt ruggedness VDS = V Maximum Ratings 600 V ± 20 290 mJ 50 V/ns RDSon VGS th IDSS IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC Conditions Characteristic Values TVJ = 25°C, unless otherwise min. typ. max. VGS = 10 V ID = A VDS = VGS ID = mA VDS = 600 V VGS = 0 V VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V VDS = 400 V ID = A VGS = 10 V VDS = 400 V ID = A RG = Ω 1100 60 300 mΩ 1 µA µA 100 nA 30 nC • fast CoolMOS 1 power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness • Enhanced total power density • Switched mode power supplies SMPS • Uninterruptible power supplies UPS • Power factor correction PFC • Welding • Inductive heating • PDP and LCD adapter

PDF Datasheet Preview

IXKP 13N60C5M

CoolMOS 1 Power MOSFET

Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

Preliminary data

ID25

VDSS
= 600 V

R = DS on max Ω

TO-220 FP

MOSFET

VDSS VGS

ID25 ID90 EAS EAR dV/dt

Conditions TVJ = 25°C

TC = 25°C TC = 90°C
single pulse repetitive

ID = A TC = 25°C

MOSFET dV/dt ruggedness VDS = V

Maximum Ratings
600 V
± 20
290 mJ
50 V/ns

RDSon VGS th IDSS

IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC

Conditions

Characteristic Values TVJ = 25°C, unless otherwise
min. typ. max.

VGS = 10 V ID = A VDS = VGS ID = mA VDS = 600 V VGS = 0 V

VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz

TVJ = 25°C TVJ = 125°C

VGS = 0 to 10 V VDS = 400 V ID = A

VGS = 10 V VDS = 400 V ID = A RG = Ω
1100 60
300 mΩ
1 µA µA
100 nA
30 nC
• fast CoolMOS 1 power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
• Switched mode power supplies SMPS
• Uninterruptible power supplies UPS
• Power factor correction PFC
• Welding
• Inductive heating
• PDP and LCD adapter

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Datasheet ID: IXKP13N60C5M 644319