IXKP13N60C5
IXKP13N60C5 Datasheet
IXKP 13N60C5
| Part | Datasheet |
|---|---|
IXKP13N60C5 |
IXKP13N60C5 (pdf) |
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| IXKP 13N60C5 CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 13 A VDSS = 600 V R = DS on max Ω TO-220 AB MOSFET VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = A TC = 25°C MOSFET dV/dt ruggedness VDS = V Maximum Ratings 600 V ± 20 13 A 9A 290 mJ 50 V/ns RDSon VGS th IDSS IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC Conditions Characteristic Values TVJ = 25°C, unless otherwise min. typ. max. VGS = 10 V ID = A VDS = VGS ID = mA VDS = 600 V VGS = 0 V VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V VDS = 400 V ID = A VGS = 10 V VDS = 400 V ID = A RG = Ω 1100 60 300 mΩ 1 µA µA 100 nA 30 nC • fast CoolMOS 1 power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness • Enhanced total power density • Switched mode power supplies SMPS |
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