IXGK50N60BU1
IXGK50N60BU1 Datasheet
IXGK 50N50BU1 IXGK 50N60BU1
| Part | Datasheet |
|---|---|
IXGK50N60BU1 |
IXGK50N60BU1 (pdf) |
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| HiPerFASTTM IGBT with Diode Combi Pack IXGK 50N50BU1 IXGK 50N60BU1 VCES IC25 500 V 75 A 600 V 75 A VCE sat V 100ns V 120ns Preliminary data Test Conditions VCES VCGR VGES V IC25 IC90 ICM SSOA RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C TJ TJM Tstg Weight Mounting torque M4 Maximum lead temperature for soldering mm in. from case for 10 s Maximum Ratings 50N50 50N60 ±20 ±20 ±30 ±30 ICM = 100 VCES 300 W -55 +150 -55 +150 Nm/lb.in. TO-264 AA G = Gate, E = Emitter, C = Collector, TAB = Collector q International standard package JEDEC TO-264 AA q High frequency IGBT and antiparallel FRED in one package q 2nd generation HDMOSTM process q Low V CE sat |
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