IXFR14N100Q2

IXFR14N100Q2 Datasheet

IXFR14N100Q2

Part	Datasheet
IXFR14N100Q2	IXFR14N100Q2 (pdf)

PDF Datasheet Preview
Advanced Technical Data HiPerFETTM Power MOSFETs Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr IXFR14N100Q2 VDSS ID25 RDS on = 1000 V A trr 300 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight VDSS VGS th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TTCC 25°C, 25°C pulse width limited TTCC = 25°C = 25°C TISJ I1D5M0, °dCi/d, 100 =2 A/µs, VDSS, TC = 25°C mm in from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Maximum Ratings 1000 1000 ±30 ±40 V/ns -55 +150

PDF Datasheet Preview

Advanced Technical Data

HiPerFETTM

Power MOSFETs

Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr

IXFR14N100Q2

VDSS

ID25

RDS on =
1000 V A
trr 300 ns

Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt

PD TJ TJM Tstg TL VISOL

FC Weight

VDSS VGS th IGSS IDSS

RDS on

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1

Continuous Transient

TC = 25°C

TTCC
25°C, 25°C
pulse
width
limited

TTCC
= 25°C = 25°C

TISJ

I1D5M0, °dCi/d,
100 =2

A/µs,

VDSS,

TC = 25°C
mm in from case for 10 s
50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force

Maximum Ratings
1000
1000
±30
±40

V/ns
-55 +150

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Datasheet ID: IXFR14N100Q2 644288