IXFR30N50Q
IXFR30N50Q Datasheet
IXFR 30N50Q
| Part | Datasheet |
|---|---|
IXFR30N50Q |
IXFR30N50Q (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q Electrically Isolated Back Surface IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr 250 ns RDS on Preliminary data VDSS VDGR VGS VGSM ID25 EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous ±20 Transient ±30 TC = 25°C 25°C, Pulse width limited = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150°C, RG = 2 W TC = 25°C 30N50 32N50 30N50 32N50 30N50 32N50 -55 +150 -55 +150 mm in. from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab 2500 |
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