IXFP5N50PM
IXFP5N50PM Datasheet
IXFP 5N50PM
| Part | Datasheet |
|---|---|
IXFP5N50PM |
IXFP5N50PM (pdf) |
| PDF Datasheet Preview |
|---|
| Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab IXFP 5N50PM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = 500 V ID25 = A RDS on 200 ns VDSS VDGR VGSS V ID25 IDM IAR EAR EAS dv/dt TJ TJM T TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C RGS = 1 Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS di/dt A/µs, VDD TJ C, RG = 30 = 25° C mm in. from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings OVERMOLDED TO-220 IXTP...M OUTLINE ± 30 ± 40 V/ns Isolated Tab G = Gate S = Source D = Drain -55 +150 -55 +150 Nm/lb.in. l Plastic overmolded tab for electrical isolation l Fast intrinsic diode l International standard package l Unclamped Inductive Switching UIS rated l Low package inductance - easy to drive and to protect Test Conditions |
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