IXFN38N100Q2
IXFN38N100Q2 Datasheet
IXFN38N100Q2
| Part | Datasheet |
|---|---|
IXFN38N100Q2 |
IXFN38N100Q2 (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low High dV/dt, Low trr Intrinsic VDSS = ID25 = RDS on = 1000 V 38 A trr 300 ns Preliminary Data Sheet VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TTCC = 25°C = 25°C ITSJ I1D5M0, °dCi/,dRt 100 =2 A/µs, VDSS TC = 25°C 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Maximum Ratings 1000 ±30 ±40 38 152 V/ns -55 +150 -55 +150 2500 Nm/lb.in. Nm/lb.in. VDSS VGS th IGSS IDSS RDS on Test Conditions VGS = 0 V, ID = 1mA |
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