IXFN280N07
IXFN280N07 Datasheet
IXFN 280N07
| Part | Datasheet |
|---|---|
IXFN280N07 |
IXFN280N07 (pdf) |
| PDF Datasheet Preview |
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| HiPerFETTM IXFN 280N07 Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I IL RMS IDM IAR EAR EAS dv/dt TJ TJM Tstg VISOL TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque Terminal connection torque 70 ±20 ±30 280 100 1120 180 60 3 5 V/ns -55 +150 -55 +150 2500 3000 Nm/lb.in. Nm/lb.in. Weight VDSS VGH th I IDSS RDS on Test Conditions VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 120A Pulse test, t 300 µs, duty cycle d 2 % Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. TJ = 25°C TJ = 125°C ±200 nA 100 µA 2 mA V= DSS ID25 = = RDS on |
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