IXFN180N07
IXFN180N07 Datasheet
IXFN 200 N06 IXFN 180 N07 IXFN 200 N07
| Part | Datasheet |
|---|---|
IXFN180N07 |
IXFN180N07 (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 VDSS 60 V 70 V 70 V ID25 200 A 180 A 200 A RDS on 6 mW 7 mW 6 mW trr 250 ns Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW VGS V ID25 IL RMS Continuous Transient TC= 25°C Chip capability Terminal current limit ±20 ±30 200N06/200N07 180N07 IDM I EAR EAS dv/dt TJ TJM Tstg VISOL TC = 25°C, pulse width limited by TJM = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W = 25°C 50/60 Hz, RMS IISOL 1 mA Mounting torque Terminal connection torque t = 1 min t=1s V/ns -55 +150 -55 +150 2500 3000 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. Weight |
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