IXFN110N85X
IXFN110N85X Datasheet
IXFN110N85X
| Part | Datasheet |
|---|---|
IXFN110N85X |
IXFN110N85X (pdf) |
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| Advance Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN110N85X VDSS = ID25 = RDS on 850V 110A miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C 50/60 Hz, RMS t = 1 minute IISOL 1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 30 40 1170 V/ns -55 +150 C C -55 +150 C 2500 3000 Nm/lb.in Nm/lb.in G = Gate S = Source D = Drain International Standard Package miniBLOC, with Aluminium Nitride Isolation Voltage 2500V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS on Test Conditions |
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