IXFL80N50Q2

IXFL80N50Q2 Datasheet

IXFL 80N50Q2

Part	Datasheet
IXFL80N50Q2	IXFL80N50Q2 (pdf)

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HiPerFETTM Power MOSFETs IXFL 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R High dV/dt, Low t VDSS = 500 V ID25 = 64 A RDS on = 66 trr 250 ns VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM T VISOL FC Weight V DSS VGS th I IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS 150°C, TC = 25°C mm in. from case for 10 s 50/60 Hz, RMS IISOL 1 mA Mounting force t = 1 min t=1s Maximum Ratings ±30 ±40 20 V/ns -55 +150 -55 +150 2500 3000 9-27/40-120 V~ V~ lbs / N Test Conditions V = 0 V, I = 1mA VDS = VGS, ID = 8mA ±30 VDS = VDSS V =0V VGS = 10 V, ID = 40 A Note 1

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HiPerFETTM Power MOSFETs

IXFL 80N50Q2

N-Channel Enhancement Mode

Avalanche Rated, Low Q , Low Intrinsic R

High dV/dt, Low t

VDSS = 500 V ID25 = 64 A

RDS on = 66 trr 250 ns

VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt

PD TJ TJM T

VISOL

FC Weight

V DSS

VGS th I

IDSS

RDS on

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1

Continuous Transient

TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C

TC = 25°C TC = 25°C

IS IDM, di/dt 100 A/µs, VDD VDSS
150°C,

TC = 25°C
mm in. from case for 10 s
50/60 Hz, RMS

IISOL 1 mA Mounting force
t = 1 min t=1s

Maximum Ratings
±30
±40
20 V/ns
-55 +150
-55 +150
2500 3000 9-27/40-120

V~ V~ lbs / N

Test Conditions

V = 0 V, I = 1mA

VDS = VGS, ID = 8mA
±30

VDS = VDSS V =0V

VGS = 10 V, ID = 40 A Note 1

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Datasheet ID: IXFL80N50Q2 644277