IXFK72N20
IXFK72N20 Datasheet
IXFK72N20 IXFK80N20
| Part | Datasheet |
|---|---|
IXFK72N20 |
IXFK72N20 (pdf) |
| PDF Datasheet Preview |
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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data IXFK72N20 IXFK80N20 200 V 72 A 200 V 80 A trr 200 ns R DS on 35 mW 30 mW VDSS VDGR VGS VGSM I IAR E dv/dt PD TJ TJM Tstg T Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions Maximum Ratings TO-264 AA TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient = 25°C 72N20 80N20 TC = 25°C, pulse width limited by TJM TC = 25°C 72N20 80N20 = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, 150°C, TC = 25°C mm in from case for 10 s Mounting torque 200 ±20 ±30 72 80 288 320 74 45 360 -55 +150 150 -55 +150 V/ns G = Gate S = Source D = Drain TAB = Drain W °C °C °C °C Nm/lb.in. • International standard packages • Molding epoxies meet UL 94V-0 flammability classification • Low RDS on HDMOSTM process • Unclamped Inductive Switching UIS rated • Fast intrinsic rectifier Test Conditions |
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