IXFK26N120P

IXFK26N120P Datasheet


PolarTM Power MOSFET IXFK26N120P

Part Datasheet
IXFK26N120P IXFK26N120P IXFK26N120P (pdf)
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Preliminary Technical Information

PolarTM Power MOSFET IXFK26N120P

HiPerFETTM

IXFX26N120P

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

VDSS =

ID25 =

RDS on
1200V 26A 460mΩ 300ns

TO-264 IXFK

VDSS VDGR

VGSS VGSM

ID25 IDM IAR EAR EAS
dV/dt

PD TJ TJM Tstg

TL TSOLD

Weight

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

Continuous Transient

TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C

IS IDM, VDD VDSS, TJ 150°C TC = 25°C
mm in. from case for 10s Plastic body for 10s

Mounting torque IXFK

Mounting force

IXFX

IXFK IXFX

Maximum Ratings
1200
1200
± 30
± 40
15 960 -55 +150 -55 +150
300 260

V/ns
°C °C °C
°C °C

Nm/lb.in.

N/lb

Test Conditions

TJ = 25°C unless otherwise specified
More datasheets: MB90223PF-GT-372 | MB90224PF-GT-370 | MB90224PF-GT-368 | MB90223PF-GT-375 | MB90223PF-GT-374 | MB90223PF-GT-373 | MB90224PF-GT-370E1 | DEMY5W1S | 325534009-50 | 63811-3400


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Datasheet ID: IXFK26N120P 644274