IXFC24N50Q
IXFC24N50Q Datasheet
IXFC 26N50 IXFC 24N50
| Part | Datasheet |
|---|---|
IXFC24N50Q |
IXFC24N50Q (pdf) |
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| ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS 500 V 500 V ID25 23 A 21 A trr 250 ns RDS on Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight VDSS VGS th IGSS IDSS RDS on Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous ±20 Transient ±30 TC = 25°C 26N50 24N50 TC = 25°C, Pulse width limited by TJM 26N50 24N50 TC = 25°C 26N50 24N50 TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C 230 -55 +150 150 -55 +150 mm in. from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V/ns °C °C °C Test Conditions VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = 0.8•VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2 Characteristic Values |
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