IXFC16N80P
IXFC16N80P Datasheet
IXFC 16N80P
| Part | Datasheet |
|---|---|
IXFC16N80P |
IXFC16N80P (pdf) |
| PDF Datasheet Preview |
|---|
| Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXFC 16N80P V= DSS ID25 = RDS on 800 9 650 250 N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Test Conditions ISOPLUS220TM IXFC Maximum Ratings E153432 VDSS VDGR VGS VGSM ID25 IDM EAR EAS TJ = 25° C to 150° C TJ = 25° C to 150° C RGS = 1 Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM = 25° C TC = 25° C TC = 25° C ± 30 ± 40 G = Gate S = Source Isolated back surface D = Drain dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight IS di/dt A/µs, VDD TJ C, RG = 5 TC = 25° C mm in. from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force Test Conditions TJ = 25° C unless otherwise specified BVDSS VGS = 0 V, ID = 250 µA V/ns -55 +150 -55 +150 2500 |
| More datasheets: PM0402-56NJ | PM0402-27NJ | PM0402-6N8J | PM0402-33NJ | PM0402-3N9 | PM0402-3N3 | PM0402-39NJ | PM0402-15NJ | PM0402-5N6 | DAMM-15P-P |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IXFC16N80P Datasheet file may be downloaded here without warranties.