IXFC14N80P

IXFC14N80P Datasheet

PolarHVTM HiPerFET IXFC 14N80P Power MOSFET ISOPLUS 220TM

Part	Datasheet
IXFC14N80P	IXFC14N80P (pdf)

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PolarHVTM HiPerFET IXFC 14N80P Power MOSFET ISOPLUS 220TM Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode V = 800 V DSS ID25 = RDS on 770 mΩ trr 250 ns VDSS VDGR VGS VGSM ID25 I IAR EAR EAS dv/dt PD TJ T Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MΩ Continuous Transient TC = 25°C 25°C, pulse width limited TC = 25°C TC = 25°C TC = 25°C I, DM di/dt A/us, V, DSS TJ 150°C, RG = 5 Ω TC = 25°C mm in. from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force Maximum Ratings ±30 ±40 V/ns -55 +150 -55 +150 2500 N/lb Test Conditions TJ = 25°C, unless otherwise specified BVDSS VGS = 0 V, ID = 250 uA

PDF Datasheet Preview

PolarHVTM HiPerFET IXFC 14N80P Power MOSFET ISOPLUS 220TM

Electrically Isolated Tab

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

V = 800 V DSS

ID25 =

RDS on 770 mΩ
trr 250 ns

VDSS VDGR VGS VGSM ID25 I

IAR EAR EAS
dv/dt

PD TJ T

Tstg TL VISOL FC Weight

Test Conditions

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MΩ

Continuous Transient

TC = 25°C
25°C,
pulse
width
limited

TC = 25°C

TC = 25°C TC = 25°C

I, DM
di/dt

A/us,

V, DSS

TJ 150°C, RG = 5 Ω

TC = 25°C
mm in. from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force

Maximum Ratings
±30
±40

V/ns
-55 +150
-55 +150
2500

N/lb

Test Conditions

TJ = 25°C, unless otherwise specified

BVDSS

VGS = 0 V, ID = 250 uA

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Datasheet ID: IXFC14N80P 644264