IXFK30N50Q
IXFK30N50Q Datasheet
IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q
| Part | Datasheet |
|---|---|
IXFK30N50Q |
IXFK30N50Q (pdf) |
| Related Parts | Information |
|---|---|
IXFX30N50Q |
IXFX30N50Q |
| PDF Datasheet Preview |
|---|
| HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 30 A 500 V 32 A RDS on trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient ±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 30N50Q 32N50Q 30N50Q 32N50Q 1500 IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C mm in from case for 10 s Mounting torque V/ns -55 + 150 -55 + 150 °C °C °C Nm/lb.in. TO-247 TO-268 Test Conditions VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = ID25 Note 1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. |
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