IXFH12N90P
IXFH12N90P Datasheet
IXFH12N90P IXFV12N90P IXFV12N90PS
| Part | Datasheet |
|---|---|
IXFH12N90P |
IXFH12N90P (pdf) |
| Related Parts | Information |
|---|---|
IXFV12N90P |
IXFV12N90P |
IXFV12N90PS |
IXFV12N90PS |
| PDF Datasheet Preview |
|---|
| Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N90P IXFV12N90P IXFV12N90PS VDSS = ID25 = RDS on 900V 12A 900mΩ 300ns PLUS220 IXFV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings ± 30 ± 40 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 12 24 6 500 15 380 -55 +150 -55 +150 V/ns W °C °C °C Maximum lead temperature for soldering Plastic body for 10s Mounting torque TO-247 Nm/lb.in. Mounting force PLUS220 N/lb. TO-247 PLUS220 types Test Conditions TJ = 25°C, unless otherwise specified BVDSS VGS = 0V, ID = 1mA VGS th VDS = VGS, ID = 1mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS on |
| More datasheets: HFE4070-500-ABA | HFE4070-500-ADA | HFE4070-500-BAA | HFE4070-500-BBA | HFE4070-500-XBA | HFE4070-500/BAA | MDM-31SH034P | DAMA26PA101F0 | 2002180700 | 96MPCL-1.9F8-1M4T |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IXFH12N90P Datasheet file may be downloaded here without warranties.