IXFT58N20Q TRL
IXFT58N20Q TRL Datasheet
IXFH 58N20Q IXFT 58N20Q
| Part | Datasheet |
|---|---|
IXFT58N20Q TRL |
IXFT58N20Q TRL (pdf) |
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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet IXFH 58N20Q IXFT 58N20Q VDSS = ID25 = = RDS on 200 V 58 A 40 mW trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C mm in. from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings ±20 ±30 V/ns -55 +150 -55 +150 Nm/lb.in. Test Conditions TJ = 25°C, unless otherwise specified VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. VGS th VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 25 µA 1 mA RDS on VGS = 10 V, ID = ID25 Pulse test, t 300 µs, duty cycle d 2 % TO-268 D3 IXFT Case Style TO-247 AD G = Gate S = Source D = Drain TAB = Drain |
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