IXFH67N10Q

IXFH67N10Q Datasheet

IXFH/IXFM 67 N10 IXFH/IXFM 75 N10

Part	Datasheet
IXFH67N10Q	IXFH67N10Q (pdf)

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HiPerFETTM Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family V DSS 100 V 100 V 67 A 75 A R DS on 25 mW 20 mW trr 200 ns Symbol VDSS VDGR V VGSM ID25 EAR dv/dt TJM Tstg T Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C 25°C, pulse width limited TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C mm in. from case for 10 s Mounting torque 67N10 75N10 67N10 75N10 67N10 75N10 ±20 ±30 V/ns -55 +150 -55 +150 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = 0 V, ID = 250 mA

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HiPerFETTM Power MOSFETs

IXFH/IXFM 67 N10 IXFH/IXFM 75 N10

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

V DSS
100 V 100 V
67 A 75 A

R DS on
25 mW 20 mW
trr 200 ns

Symbol VDSS VDGR V

VGSM ID25

EAR dv/dt

TJM Tstg T

Md Weight

VDSS VGS th IGSS IDSS

RDS on

Test Conditions

Maximum Ratings

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient

TC = 25°C
25°C,
pulse
width
limited

TC = 25°C

TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C
mm in. from case for 10 s Mounting torque
67N10 75N10
67N10 75N10
67N10 75N10
±20
±30

V/ns
-55 +150
-55 +150

Nm/lb.in.

TO-204 = 18 g, TO-247 = 6 g

Test Conditions

Characteristic Values

TJ = 25°C, unless otherwise specified min. typ. max.

VGS = 0 V, ID = 250 mA

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Datasheet ID: IXFH67N10Q 644245