IXER60N120
IXER60N120 Datasheet
IXER 60N120
| Part | Datasheet |
|---|---|
IXER60N120 |
IXER60N120 (pdf) |
| PDF Datasheet Preview |
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| NPT3 IGBT in ISOPLUS 247TM IXER 60N120 IC25 = 95 A VCES = 1200 V V = CE sat typ. V ISOPLUS 247TM E153432 G Isolated Backside G = Gate C = Collector E = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK t SCSOA Ptot VCE sat V GE th ICES IGES t tr td off tf Eon Eoff Cies QGon R thJC RthJH Conditions Maximum Ratings tFeatures • NPT3 IGBT TVJ = 25°C to 150°C 1200 ± 20 u TC = 25°C TC = 90°C o VGE = ±15 V RG = 22 Ω TVJ = 125°C - RBSOA, Clamped inductive load L = 100 µH VCES ±15 125°C e non-repetitive TC = 25°C a s Conditions Characteristic Values - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits |
| More datasheets: 9210-86 | 9210-88 | 9210-90 | 9210-92 | 9210-94 | 9210-76 | DAM-3H3S-N-A197 | IPS031RTRL | IPS031R | CA07A32-5PB |
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