IXER35N120D1

IXER35N120D1 Datasheet


IXER 35N120D1

Part Datasheet
IXER35N120D1 IXER35N120D1 IXER35N120D1 (pdf)
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IXER 35N120D1

NPT3 IGBT with Diode
in ISOPLUS 247TM

IC25
= 50 A

VCES
= 1200 V

VCE sat typ. = V

ISOPLUS 247TM

E153432

Isolated Backside*

G = Gate C = Collector *Patent pending

E = Emitter

IGBT

Symbol VCES VGES IC25 IC90 ICM VCEK t

SCSOA Ptot

VCE sat

V GE th

ICES

IGES t
tr td off tf Eon Eoff Cies QGon R
thJC

RthJH

Conditions

Maximum Ratings

TVJ = 25°C to 150°C
1200
± 20

TC = 25°C TC = 90°C

VGE = ±15 V RG = 39 TVJ = 125°C RBSOA, Clamped inductive load L = 100 µH

VCES
900V;
±15
125°C
non-repetitive

TC = 25°C

Conditions

Characteristic Values

TVJ = 25°C, unless otherwise specified min. typ. max.

IC = 35 A VGE = 15 V TVJ = 25°C TVJ = 125°C

I = 1 mA V = V
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Datasheet ID: IXER35N120D1 644239