IXER 35N120D1
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IXER35N120D1 (pdf) |
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IXER 35N120D1 NPT3 IGBT with Diode in ISOPLUS 247TM IC25 = 50 A VCES = 1200 V VCE sat typ. = V ISOPLUS 247TM E153432 Isolated Backside* G = Gate C = Collector *Patent pending E = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK t SCSOA Ptot VCE sat V GE th ICES IGES t tr td off tf Eon Eoff Cies QGon R thJC RthJH Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C VGE = ±15 V RG = 39 TVJ = 125°C RBSOA, Clamped inductive load L = 100 µH VCES 900V; ±15 125°C non-repetitive TC = 25°C Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. IC = 35 A VGE = 15 V TVJ = 25°C TVJ = 125°C I = 1 mA V = V |
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