IXEH25N120
IXEH25N120 Datasheet
IXEH 25N120 IXEH 25N120D1
| Part | Datasheet |
|---|---|
IXEH25N120 |
IXEH25N120 (pdf) |
| Related Parts | Information |
|---|---|
IXEH25N120D1 |
IXEH25N120D1 |
| PDF Datasheet Preview |
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| NPT3 IGBT IXEH 25N120 IXEH 25N120D1 IC25 = 36 A VCES = 1200 V VCE sat typ = V IXEH 25N120 TO-247 AD IXEH 25N120D1 C TAB IGBT Symbol VCES VGES IC25 IC90 ICM VCEK t SCSOA Ptot VCE sat VGE th ICES IGES td on tr td off tf Eon Eoff Cies QGon RthJC Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C VGE = ±15 V RG = 68 TVJ = 125°C RBSOA, Clamped inductive load L = 100 µH VCES 900V; ±15 125°C non-repetitive TC = 25°C Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. IC = 25 A VGE = 15 V TVJ = 25°C TVJ = 125°C IC = mA VGE = VCE VCE = VCES VGE = 0 V TVJ = 25°C TVJ = 125°C VCE = 0 V VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V IC = 20 A VGE = ±15 V RG = 68 200 nA VCE = 25 V VGE = 0 V f = 1 MHz VCE = 600 V VGE = 15 V IC = 20 A • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits |
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