DSEE8-08CC

DSEE8-08CC Datasheet

DSEE 8-08CC

Part	Datasheet
DSEE8-08CC	DSEE8-08CC (pdf)

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HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEE 8-08CC IFAV = 10 A VRRM = 800 V trr = 30 ns VRRMc V VRRM V Type ISOPLUS 220LVTM DSEE 8-08CC Preliminary Data Sheet Conditions Maximum Ratings Isolated back surface IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight TC = 130°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive - o TC = 25°C 50/60 Hz RMS IISOL 1 mA e Mounting force typical 2500 / N / lb a s Conditions h TVJ = 25°C VR = VRRM Characteristic Values typ. max. p TVJ = 150°C VR = VRRM IF = 10 A TVJ = 125°C TVJ = 25°C t z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface u- 2500V electrical isolation z Low cathode to tab capacitance <15pF z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0 z Antiparallel diode for high frequency switching devices z Antisaturation diode z Snubber diode z Free wheeling diode in converters and motor control circuits z Rectifiers in switch mode power supplies SMPS z Inductive heating z Uninterruptible power supplies UPS z Ultrasonic cleaners and welders RthJC RthCH trr IF = 1 A -di/dt = 50 A/µs VR = 30 V TVJ = 25°C VR = 100 V IF = 12 A -diF/dt = 100 A/µs TVJ = 100°C K/W Advantages

PDF Datasheet Preview

HiPerDynFREDTM Epitaxial Diode

ISOPLUS220TM

Electrically Isolated Back Surface

DSEE 8-08CC

IFAV = 10 A VRRM = 800 V trr = 30 ns

VRRMc V

VRRM V

Type

ISOPLUS 220LVTM

DSEE 8-08CC

Preliminary Data Sheet

Conditions

Maximum Ratings

Isolated back surface

IFRMS IFAVM IFSM EAS

IAR TVJ TVJM Tstg Ptot VISOL FC Weight

TC = 130°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine

TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH

VA = 1.5•VR typ. f = 10 kHz repetitive
- o TC = 25°C
50/60 Hz RMS IISOL 1 mA
e Mounting force
typical
2500
/ N / lb
a s Conditions h TVJ = 25°C VR = VRRM

Characteristic Values typ. max.
p TVJ = 150°C VR = VRRM

IF = 10 A TVJ = 125°C

TVJ = 25°C
t z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface
u- 2500V electrical isolation
z Low cathode to tab capacitance <15pF z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0
z Antiparallel diode for high frequency switching devices
z Antisaturation diode z Snubber diode z Free wheeling diode in converters
and motor control circuits z Rectifiers in switch mode power
supplies SMPS z Inductive heating z Uninterruptible power supplies UPS z Ultrasonic cleaners and welders

RthJC RthCH trr

IF = 1 A -di/dt = 50 A/µs VR = 30 V TVJ = 25°C

VR = 100 V IF = 12 A -diF/dt = 100 A/µs TVJ = 100°C

K/W Advantages

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Datasheet ID: DSEE8-08CC 644172