DGS17-03CS

DGS17-03CS Datasheet

DGS 17-03CS DGSK 36-03CS

Part	Datasheet
DGS17-03CS	DGS17-03CS (pdf)

Related Parts	Information
DGSK36-03CS	DGSK36-03CS

PDF Datasheet Preview
Gallium Arsenide Schottky Rectifier Second generation DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = pF Type DGS 17-03CS Marking on product 17A300AS Circuit Single DGSK 36-03CS DGSK 36-03CS Common cathode Package TO-252 AA A TO-263 AB A A = Anode, TAB = Cathode Diode Symbol VRRM/RSM IFAV IFSM Ptot Conditions TC = 25°C DC TC = 90°C DC TVJ = 45°C tp = 10 ms 50 Hz , sine TC = 25°C Maximum Ratings Conditions Characteristic Values min. typ. max. IF = A TVJ = 25°C IF = A TVJ = 125°C VR = VRRM TVJ = 25°C VR = VRRM TVJ = 125°C IF = 5 A; -diF/dt = 150 A/µs; VR = 150 V TVJ = 125°C VR = 150 V TVJ = 125°C RthJC Data according to IEC 60747 and per diode unless otherwise specified pF K/W Component Conditions TVJ Tstg Maximum Ratings GaAs Schottky Diode with Enhanced Barrier Height • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junction capacity of GaAs diode independent from temperature - soft turn off Surface Mount Packages • Incorporating Single and Dual Diode Topologies • Industry Standard Package Outlines • Epoxy meets UL 94V-0

PDF Datasheet Preview

Gallium Arsenide Schottky Rectifier

Second generation

DGS 17-03CS DGSK 36-03CS

VRRM = 300 V IDC = 29 A CJunction = pF

Type DGS 17-03CS

Marking on product 17A300AS

Circuit

Single

DGSK 36-03CS

DGSK 36-03CS

Common cathode

Package

TO-252 AA A

TO-263 AB A

A = Anode, TAB = Cathode

Diode

Symbol VRRM/RSM IFAV IFSM Ptot

Conditions

TC = 25°C DC TC = 90°C DC TVJ = 45°C tp = 10 ms 50 Hz , sine TC = 25°C

Maximum Ratings

Conditions

Characteristic Values min. typ. max.

IF = A TVJ = 25°C

IF = A TVJ = 125°C

VR = VRRM TVJ = 25°C

VR = VRRM TVJ = 125°C

IF = 5 A;
-diF/dt = 150 A/µs;

VR = 150 V TVJ = 125°C

VR = 150 V TVJ = 125°C

RthJC Data according to IEC 60747 and per diode unless otherwise specified
pF K/W

Component

Conditions

TVJ Tstg

Maximum Ratings

GaAs Schottky Diode with Enhanced Barrier Height
• lowest operating forward voltage drop due
to additional injection of minority carriers
• high switching speed
- low junction capacity of GaAs diode independent from temperature
- soft turn off Surface Mount Packages
• Incorporating Single and Dual Diode

Topologies
• Industry Standard Package Outlines
• Epoxy meets UL 94V-0

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Datasheet ID: DGS17-03CS 644140