IXZ2210N50L2

IXZ2210N50L2 Datasheet

IXZ2210N50L2 RF Power MOSFET

Part	Datasheet
IXZ2210N50L2	IXZ2210N50L2 (pdf)

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IXZ2210N50L2 RF Power MOSFET N-channel enhancement mode linear RF power MOSFET Ideal for class AB and C industrial, scientific, medical, and commercial applications. • Isolated Substrate high isolation voltage >2500V excellent thermal transfer Increased temperature and power cycling capability • IXYS RF Low Capacitance Z-MOSTM Process • Very low insertion inductance <2nH • No beryllium oxide BeO or other hazardous materials Advantages • High Performance RF Package • Easy to insulators needed DRAIN 1 DRAIN 2 GATE 1 GATE 2 VDSS = 500 V ID25 = 10 A Maximum Ratings SG1 SD1 SD2 SG2 Symbol Parameter Test Conditions VDSS VDGR VGS VGSM ID25 PDC PDHS PDAMB RthJC RthJHS Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Package power dissipation per MOSFET Dissipation to heat-sink per MOSFET Ambient power dissipation Thermal resistance junction to case Thermal resistance junction to heat-sink TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient Tc = 25°C Tc = 25°C Tc = 25°C, Derate 2 W/°C above 25°C TAMB = 25°C TJ, TSTG Operating and storage junction temperature range Lead temperature 1.6mm 0.063 in from case for 10 s Electrical Characteristics Maximum Units 500 V ±20 ±30 ° C/W -55 to 150 °C 300 Symbol Parameter Test Conditions Static BVDSS IDSS IGSS gfs VGS th Breakdown voltage drain to source Drain leakage current Gate leakage current Transconductance Threshold voltage VGS = 0 V, ID = 4 ma

PDF Datasheet Preview

IXZ2210N50L2 RF Power MOSFET

N-channel enhancement mode linear RF power MOSFET

Ideal for class AB and C industrial, scientific, medical, and commercial applications.
• Isolated Substrate high isolation voltage >2500V excellent thermal transfer Increased temperature and power cycling
capability
• IXYS RF Low Capacitance Z-MOSTM Process
• Very low insertion inductance <2nH
• No beryllium oxide BeO or other
hazardous materials

Advantages
• High Performance RF Package
• Easy to insulators needed

DRAIN 1

DRAIN 2

GATE 1

GATE 2

VDSS = 500 V ID25 = 10 A

Maximum Ratings

SG1 SD1

SD2 SG2

Symbol Parameter

Test Conditions

VDSS VDGR VGS VGSM ID25 PDC PDHS PDAMB RthJC RthJHS

Drain-source voltage Drain-gate voltage

Gate-source voltage

Continuous drain current Package power dissipation per MOSFET Dissipation to heat-sink per MOSFET Ambient power dissipation Thermal resistance junction to case Thermal resistance junction to heat-sink

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient Tc = 25°C Tc = 25°C Tc = 25°C, Derate 2 W/°C above 25°C TAMB = 25°C

TJ, TSTG Operating and storage junction temperature range

Lead temperature
1.6mm 0.063 in from case for 10 s

Electrical Characteristics

Maximum Units
500 V
±20
±30
° C/W
-55 to 150
°C 300

Symbol Parameter

Test Conditions

Static

BVDSS IDSS IGSS gfs VGS th

Breakdown voltage drain to source Drain leakage current Gate leakage current Transconductance Threshold voltage

VGS = 0 V, ID = 4 ma

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Datasheet ID: IXZ2210N50L2 644351