375-102N15A-00
375-102N15A-00 Datasheet
DE375-102N15A RF Power MOSFET
| Part | Datasheet |
|---|---|
375-102N15A-00 |
375-102N15A-00 (pdf) |
| PDF Datasheet Preview |
|---|
| N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS IDM, di/dt 100A/µs, VDD VDSS, Tj 150°C, RG = IS = 0 Tc = 25°C Derate 3.7W/°C above 25°C Tc = 25°C DE375-102N15A RF Power MOSFET Maximum Ratings 1000 1000 ±20 ±30 5 V/ns VDSS = 1000 V ID25 = 15 A RDS on = 940 W >200 V/ns 940 W W GATE DRAIN Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. typ. max. VDSS VGS th IGSS IDSS VGS = 0 V, ID = 3 ma VDS = VGS, ID = 1 ma VGS = ±20 VDC, VDS = 0 VDS = VDSS TJ = 25°C VGS = 0 TJ = 125°C 1000 ±100 nA 50 µA 1 mA RDS on VGS = 15 V, ID = 0.5ID25 Pulse test, t 300µS, duty cycle d 2% RthJC RthJHS gfs TJ TJM Tstg TL Weight VDS = 15 V, ID = 0.5ID25, pulse test 1.6mm in from case for 10 s |
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